Advanced treatment of semiconductor materials with an emphasis on binary compounds, ternary and quaternary alloys, and strained-layer structures. Topics include crystal structure; lattice vibrations and phonons; energy band structure; equilibrium and non-equilibrium carrier distributions; electron and hole transport via diffusion and drift; and carrier generation and recombination mechanisms.
Students in the College of Engineering who intend to follow a career path that involves the development of new semiconductor materials and nanoscale structures must understand the underlying physical phenomena that enable the operation of modern devices built from such materials. This course will serve as a prerequisite for two new advanced courses offered in the MSE and ECE Departments on the topics of semiconductor-based nanostructures, electronic devices, and photonic devices.
ECE: 4214 or MSE 3204 or PHYS 3455, graduate standing in the College of Engineering or College of Science. MSE: 3204 or ECE 4214 or PHYS 3455, and graduate standing in College of Engineering or College of Science.
The advanced course builds upon the subject matter taught in MSE 3204 and PHYS 3455.
Percentage of Course
|Basic Concepts in Quantum Mechanics||5%|
|Crystal Structure and Reciprocal Space||5%|
|Lattice Vibrations and Phonons||10%|
|Electrons and Holes in Periodic Potentials||15%|
|Energy Band Structure of Semiconductor Alloys and Heterostructures||25%|
|Equilibrium Distributions of Electrons and Holes||10%|
|Boltzmann Transport Equations for Charge and Energy||10%|
|Carrier Generation and Recombination Mechanisms||10%|
|Drift and Diffusion Currents and the Continuity Equation||10%|