Description of the performance characteristics and limitations of basic semiconductor electronic devices in terms of the properties of semiconductor materials and device structure.
Why take this course?
Graduate students in this field require a knowledge of the performance characteristics and limitations of basic semiconductor electronics devices to model these devices and to design electronic systems using these devices. The syllabus change adds new material on crystal growth with some compression of material on the device physics.
Prerequisites: Graduate standing
Knowledge of basic electronics and semiconductor physics, and possession of good background in Mathematics (Differential Equations, boundary value problems) and computing (for device modeling).
Major Measurable Learning Objectives
the graduate student will be familiar with the state-of-the-art semiconductor materials and the basic semiconductor devices and circuit applications.
The student will have an understanding of semiconductor physics, bipolar devices and unipolar devices, and related device operations.
The student will be capable of carrying the analysis of semiconductor devices subject to different effects such as high-field, thermal, and optical effects.
Percentage of Course
Physics and Properties of Semiconductors
PN Junction Diode
Bipolar Junction Transistor (BJT)
Metal - Semiconductor Contacts
Junction Field Effect Transistor (JFET) and Metal Semiconductors
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)