ECE 4214 Semiconductor Device Fundamentals | ECE | Virginia Tech

Undergraduate PROGRAMS

Course Information


Fundamental semiconductor device physics associated with semiconductor materials and devices with an in-depth coverage of p-n and Schottky diodes, bipolar junction transistors, and metal-oxide-semiconductor and junction field effect transistors. A C- or better is required in all prerequisite courses.

Why take this course?

The electrical engineer, computer engineer, materials scientist, or physicist who works in the electronics area must have a basic knowledge of semiconductor devices and materials.

Learning Objectives

  • Determine the band structure of semiconductors when supplied with basic materials properties by applying their knowledge of quantum mechanics,
  • Calculate carrier distributions in thermal equilibrium and non-thermal equilibrium conditions for intrinsic and doped semiconductors,
  • Apply basic semiconductor drift-diffusion equations and continuity of Fermi energy to determine current flow in semiconductor devices,
  • Determine alignment of metal-semiconductor band diagrams and identify whether a junction is Ohmic or Schottky, and
  • Design a bipolar junction, metal-oxide-semiconductor and/or a field effect transistor that meets specific performance criteria through the selection of the appropriate semiconductor material(s), doping, and device dimensions.

Course Topics


Percentage of Course

Crystal structures, Band Diagrams, & Quantum Mechanics 15%
Carrier Concentration and Fermi Level 10%
Carrier Mobility 10%
Recombination and Generation of Carriers 5%
p-n Diodes, Schottky Diodes, and Ohmic Contacts 20%
Bipolar Junction Transistors 15%
Field Effect Capacitors 10%
JFET and CMOS Transistors 5%