Louis J. Guido | ECE | Virginia Tech


Louis J. Guido

Picture of Louis J. Guido

202-A Holden

Mailing Address:
302 Whittemore (0111)
Virginia Tech
Blacksburg, VA 24061

(540) 231-3551
(540) 231-8919

Associate Professor

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Ph.D., University of Illinois, 1989
M.S., Electrical Engineering, University of Illinois, 1983
B.S., Electrical Engineering, Polytechnic Institute of New York, 1982

Teaching Interests:

Semiconductors and Microelectronics, Power Electronics, Photonics and Optics, and Circuits and Electronics

Research Interests:

Semiconductors and Microelectronics, Power Electronics, Photonics and Optics , and Circuits and Electronics

Grants and Projects:
  • “GaN-on-Metal Power Devices” / Commonwealth Research Commercialization Fund / VTech Funding Award = $150,000 / PI = Guido (100%) / Performance Period = August 1, 2012 to July 31, 2013.
  • “Ultra-Low-Power Indium Arsenide Nitride Semiconductor Transistors” / NSF (SBIR – Phase II) / Subcontract from QuantTera, Inc. / VTech Funding Award = $187,000 / PI = Guido (100%) / Performance Period = November 1, 2011 to October 31, 2013.
  • “Indium Nitride Quantum Dot Solar Cells” / NASA (STTR – Phase II) / Subcontract from Kopin Corporation / VTech Funding Award = $180,000 over 2 years / PI = Guido (100%) / Performance Period = September 5, 2008 to September 4, 2010.
Selected Publications:
  • Title: Quantum Well and Quantum Dot Energy Harvesting Devices
    Author(s): R. Welser, A. Sood, O. Laboutin, L. J. Guido, N. Dhar, and P. Wijewarnasuriya
    Conference: SPIE Defense Security Symposium (paper 8035-52), Orlando, Florida, April 2011
  • Title: High-Efficiency InN-based Quantum Dot Solar Cells for Defense Applications
    Author(s): R. Welser, A. Sood, Y. Puri, O. Laboutin, L. J. Guido, N. Dhar, and P. Wijewarnasuriya
    Journal: Proceedings of the SPIE, 76830R 1-7, April, 2010
  • Title: Impurity-Induced and Impurity-Free Layer Disordering
    Author(s): L. J. Guido
    Journal: Proceedings of the Nick Holonyak, Jr. 80th Birthday Symposium, 2009
  • Title: Time Resolved Measurements of Spin and Carrier Dynamics in InAs Thin Films
    Author(s): R. Kini, K. Nantapot, G. Khodaparast, and L. J. Guido
    Journal: Journal of Applied Physics, 064318, 2008
  • Title: Arsenic Incorporation Behavior in Nitrogen-Rich GaNAs Alloys Synthesized by MOVPE
    Author(s): M. Gherasimova, R. Wheeler, L. J. Guido, K. Chang, and K. Hsieh
    Journal: MRS Symposium Proceedings, Y10.41.1-Y10.41.6, 2004
  • Title: GaInP/GaInAsN/GaAs N-p-N Bipolar Transistors: Influence of Base Layer Composition and Alloy Grading on Device Performance
    Author(s): B. Dickerson, B. Heath, L. J. Guido, K. Stevens, C. Lutz, E. Rehder, and R. Welser
    Journal: International Conference on GaAs Manufacturing Technology, 2003
  • Title: High-Quality Oxide/Nitride/Oxide Gate Insulator for GaN MIS Devices
    Author(s): B. Gaffey, L. J. Guido, X. W. Wang, and T-P. Ma
    Journal: IEEE Transactions on Electron Devices, 458-464, 2001
  • Title: Threshold Lowering in GaN Micropillar Lasers by Means of Spatially Selective Optial Pumping
    Author(s): N. Rex, R. Chang, and L. J. Guido
    Journal: IEEE Photonics Technology Letters, 1-3, 2001
  • Title: Stimulated Emission and Lasing in Whispering Gallery Modes of GaN Microdisk Cavities
    Author(s): S. Chang, N. Rex, R. Chang, G. Chong, and L. J. Guido
    Journal: Applied Physics Letters, 166-168, 1999
  • Title: Electronic Properties of Arsenic-doped Gallium Nitride
    Author(s): L. J. Guido, P. Mitev, M. Gherasimova, and B. Gaffey
    Journal: Applied Physics Letters, 2005-2007, 1998