Fundamental semiconductor device physics associated with intrinsic and doped semiconductor materials, drift-diffusion of charge carriers, and devices with an in-depth coverage of p-n and Schottky diodes, bipolar junction transistors, and metal-oxide semiconductor and junction field effect transistors.
This course is designed for 3rd year students for them to be able to understand semiconductor materials and devices. The electrical engineer, computer engineer, materials scientist, or physicist who works in the electronics area must have a basic knowledge of semiconductor devices and materials. It capitalizes on the first semiconductor materials background introduced in ECE 2204 and develops in detail the operation principle and in-depth understanding of p-n junction diodes, metal-oxide semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs).
Percentage of Course
|Crystal Structures, Band Diagrams, and Quantum Mechanics||10%|
|Intrinsic and Doped Semiconductors, and Fermi Level||10%|
|Drift-diffusion Equations and Carrier Mobility||10%|
|Recombination and Generation of Charge Carriers||5%|
|Junctions P-N Junction Diodes Schottky Diodes Ohmic Contacts||25%|
|Bipolar Junction Transistor (BJT)||15%|
|Metal-oxide-semiconductor Field Effect Transistors (MOSFETs)||20%|
|Junction Field Effect Transistors (JFETs)||5%|