ECE 3214 Semiconductor Device Fundamentals | ECE | Virginia Tech

Undergraduate PROGRAMS

Course Information


Fundamental semiconductor device physics associated with intrinsic and doped semiconductor materials, drift-diffusion of charge carriers, and devices with an in-depth coverage of p-n and Schottky diodes, bipolar junction transistors, and metal-oxide semiconductor and junction field effect transistors.

Why take this course?

This course is designed for 3rd year students for them to be able to understand semiconductor materials and devices. The electrical engineer, computer engineer, materials scientist, or physicist who works in the electronics area must have a basic knowledge of semiconductor devices and materials. It capitalizes on the first semiconductor materials background introduced in ECE 2204 and develops in detail the operation principle and in-depth understanding of p-n junction diodes, metal-oxide semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs).

Learning Objectives

  • " Evaluate the band structure of semiconductors by applying their knowledge of quantum mechanics and determine basic materials properties
  • " Calculate charge carriers distribution in thermal equilibrium and non-thermal equilibrium conditions for intrinsic and doped semiconductors
  • " Determine current flow in a p-n junction diode by applying basic semiconductor drift-diffusion equations and continuity of Fermi energy levels
  • " Determine band alignment of metal-semiconductor junction and identify whether a junction is Ohmic or Schottky
  • " Design a bipolar junction transistor (BJT), metal-oxide-semiconductor and/or junction field effect transistors (MOSFETs and JFETs) that meets specific device performance criteria through the selection of the appropriate semiconductor materials and parameters, doping density, carrier mobility, and device dimensions.

Course Topics


Percentage of Course

Crystal Structures, Band Diagrams, and Quantum Mechanics 10%
Intrinsic and Doped Semiconductors, and Fermi Level 10%
Drift-diffusion Equations and Carrier Mobility 10%
Recombination and Generation of Charge Carriers 5%
Junctions P-N Junction Diodes Schottky Diodes Ohmic Contacts 25%
Bipolar Junction Transistor (BJT) 15%
Metal-oxide-semiconductor Field Effect Transistors (MOSFETs) 20%
Junction Field Effect Transistors (JFETs) 5%