Manufacturing practices used in silicon integrated circuit fabrication and the underlying scientific basis for these process technologies. Physical models are developed to explain basic fabrication steps, such as substrate growth, thermal oxidation, dopant diffusion, ion implantation, thin film deposition, etching, and lithography. The overall CMOS integrated circuit process flow is described within the context of these physical models.
Why take this course?
The key to realizing the theoretical limits of electronic device and circuit performance is the ability to integrate many dissimilar materials over extremely small length scales into complex three-dimensional patterns. The aim of this course is to better prepare students for advanced work in microelectronics by teaching them the basic physical underpinnings of this integration in semiconductor processing.
2204 or 3054
The course builds on the phenomenological description of silicon integrated circuit processing and the laboratory experience taught in ECE 2224 (cross-listed as MSE 2224). Also, it requires some basic understanding of semiconductor device physics as taught in ECE 2204 or ECE 3054.
Major Measurable Learning Objectives
Analyze the basic physical principles underlying the key semiconductor processing steps.
Analyze the manufacturing methods and equipment used throughout the integrated circuit fabrication process.
Evaluate the mechanical, chemical, optical and electrical measurements used to characterize the semiconductor wafer at crucial stages in the fabrication process.
Apply computer simulation in process development.
Calculate design parameters for individual process steps.
Explain the entire CMOS integrated circuit process flow including choices of materials and processing conditions.
Design an overall CMOS process to meet particular device objectives.
Students will master items (1) through (5) above for topics 1 through 9 of the syllabus, and items (6) and (7) above with respect to topic 10 of the syllabus.